理论估算并实验验证了在X射线脉冲激发下低温砷化镓的光学折射率调制特性。泵浦-探针实验表明，低温砷化镓中存在的高密度复合缺陷大大减小了载流子寿命，使超热电子的弛豫时间小于1×10^-12 s，载流子的复合时间小于 2×10^-12 s，折射率的扰动时间约为2×10^-12 s。通过理论分析，给出了自由载流子和俄歇效应对该弛豫过程的定量估算，与实验结果吻合较好。该研究表明低温生长砷化镓是一种有效的可用于单次瞬态皮秒时间分辨X射线探测的材料。

利用雪崩晶体管作为高速开关器件、根据并联充电、串联放电原理设计了一种串并联相结合的MARX电路，以该电路为基础设计了一种低抖动高压脉冲驱动源，并将其应用于紫外激光脉冲的电光开关削波系统。通过同步调节器调节高压驱动脉冲和激光电光系统的时间匹配度，获得了驱动电脉冲与电光开关耦合的最佳工作状态；对匹配过程中的电光开关工作状态以及激光脉冲压缩过程进行了分析和研究，当高压驱动电脉冲幅度为2 690 V，脉宽为7.9 ns时，可以将脉宽为7.1 ns的紫外激光脉冲压缩至2.1 ns，KDP晶体的透光率达到了92.2%，电光开关的效率达到了31.7％。

Time-resolved diagnosis of the transient process using X-ray frame cameras (XRCs) is an important means in inertial confinement fusion (ICF) experiments. The sensitivity of the photocathode is a key parameter of the entire camera system. This letter aims to raise the quantum efficiency (QE) of the photocathode. With the changes in the deposition parameters, such as deposit angle, thickness of the coating in the channel, and vacuum of evaporation, the QE results are different. After testing and theoretical calculation, we find that there is a best matching value among these parameters. When the coating parameter meet this best value, the gain of the XRC can be improved significantly.

The detonation temperature is measured both theoretically and experimentally by means of a complementary metal oxide semiconductors (CMOS) image sensor. An experimental system of multiwavelength temperature measurement based on CMOS image sensing technology is designed and realized. The instant spectral information of each moment is captured by row with the CMOS image sensor, depending on the unique characteristic of its rolling shutter. With the use of multiwavelength temperature measurement theory and by fitting spectrum emissivity through the regressive least square method, the color temperature of the detonation whose temperature is variable can be obtained continuously. The system is calibrated by measuring the standard spectrum of the laser. In our system, four time temperatures are measured within 10-μs detonation. Results show that the system has a higher measuring accuracy and speed, and can be applied in high-speed spectral information collection and storage during the detonation.

The transit characteristics of gain electrons in the dynamic electric field in one micro-channel, the relation of the temporal resolution, and the gating electric pulse are discussed in detail. The simulation analyses provide guidance on how to select parameters of the gating electric pulse for designing the X-ray picosecond framing camera, based on micro-channel plates, especially with regard to the aspect of the temporal resolution of the camera. Certain experimental results are presented.

利用铝屏和氧化铟锡(ITO)屏两种结构的微通道板(MCP)成像器进行了放电实验, 通过直流首击穿后器件的绝缘强度和电极熔蚀形貌变化, 分析了屏电极结构对放电的影响。实验表明, 铝屏MCP成像器首击穿后, 铝膜电极出现如火山口状的熔蚀形貌, 在10 μs脉冲屏压下绝缘强度降低到3 kV/mm以下, 绝缘强度与MCP无关。而ITO屏MCP成像器首击穿后, 荧光质向MCP的质量迁移具有抑制阴极发射的作用, 所以放电具有稳定的场发射特性, 在10 μs脉冲屏压下绝缘强度可达到9 kV/mm。分析表明, MCP成像器间隙放电的发展主要依赖于屏电极结构, ITO屏的电极结构有利于MCP成像器绝缘性能的提高。

高速行波选通的X射线皮秒分幅相机的时间分辨率受皮秒选通脉冲的宽度和幅值的非线性关系直接影响。针对微通道板(MCP)行波选通皮秒分幅相机中的“增益压窄效应”,在高斯型皮秒选通电脉冲作用下,通过计算MCP分幅管的时间分辨率和对增益压窄效应的分析,得到MCP皮秒选通分幅管的增益压窄指数约为10.0,分幅管的时间分辨率约为选通脉冲脉宽的1/3.16。并在脉冲参数(250 ps,－1 100 V)和(220 ps,－900 V)下进行了分幅相机时间分辨率理论计算和实验测试,分别得到了理论时间分辨率为78.8 ps和67.6 ps,相机实验时间分辨率为76.4 ps 和66.5 ps的结果。

设计了一种飞秒条纹变相管．采用静电聚焦，用Monte Carlo方法对光电子的初能量、初角度以及初位置进行抽样；用有限差分法计算阴极和栅极之间以及偏转板之间的电场分布；用四阶Lunge－Kutta法模拟跟踪大量(3000个)光电子的运行轨迹；统计分析了3000个电子在最佳像面上的时间分布、位置分布；给出了变相管的空间调制传递函数、时间分辨能力等基本参量．其时间分辨能力可望达到290．4fs．

介绍了一种新型荧光屏结构，采用透明导电膜代替传统荧光屏中的铝膜作电极．分别测试了新型荧光屏和传统荧光屏的加电特性．实验结果表明新型荧光屏具有较高的耐压性能，对提高X射线变像管的空间分辨率有重要作用，而且能延长变像管的寿命．采用透明导电膜制作荧光屏还具有工艺简单，成本低和成品率高的优点．